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Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode Cu <111> coated Si Wafer
Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode Cu <111> coated Si Wafer
$57.44
Description
Cu <111> coated Si Wafer (4 inch size)
no guaranty for the other brand crimper
Application Notes Replace tube for MTI tube furnaces Operating from 1600oC to 1750oC
(may the features only in the optional bar)
Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode Cu <111> coated Si WaferSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: Two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
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