Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cm Cd General Properties for Sliver

General Properties  for Sliver

Heating Loss

Purity:  99

Conductor type:                N-type

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cm Cd General Properties for SliverGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal