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GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode MTI will replace the unsatisfied
GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode MTI will replace the unsatisfied
$189.18
Description
MTI will replace the unsatisfied substrate which has no film grown and no damage free of charge until you are satisfied within 15 days after receiving it
Special Hydrogenated Nitrile (HNBR) compounds can improve resistance to direct ozone
Conductor type: S-C-P
about 5 mm x 5 mm x 0
GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode MTI will replace the unsatisfiedGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 2" dia x 0. 35mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Resistivity:(1. 5 4. 1)E 3 ohm. cm Carrier Concentration: (0. 6 2. 4)x10^18 c. c Mobility: 1750 2450 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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