Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws Weight 12Oz (340 grams) Operation

Weight       12Oz (340 grams) Operation Temperature  Charging:       0 - 45 oC (32 - 113 o F)

and wetting

Please click the product options bar to order

Auxiliary positioning for the position of the separator

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws Weight 12Oz (340 grams) OperationSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for