Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm, bi Type: SP3-10025

Type:                              SP3-10025

Growth method                                     LEC

Make wet film thickness between 0 - 3000 microns

52 dB (A) Exhaust pressure

Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm, bi Type: SP3-10025Single crystal Si, Conductivity: N type ( P doped) Size: 5" diameter x 0. 625 mm Orientation: (100) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: One side polished Surface roughness: < 5A Packing : In single wafer carrier box Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma