 undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP YAG Surface roughness: < 15A){kind=link}
Earcuff
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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP YAG Surface roughness: < 15A
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP YAG Surface roughness: < 15A
$229.43
Description
Surface roughness: < 15A
Pressure up to 100 kg
1170°C ~ 1450°C (2138°F ~ 2642°F) in H2
Porosity: 80%
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP YAG Surface roughness: < 15AGaAs single crystal wafer Growing Method: VGF Orientation: (100) Flat: (01 1) .(011) Size: 100mm dia x 0. 6mm Polishing: two sides polished Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 41 4. 4)E8 Ohm. cm Mobility: 3240 6000 cm2 v. s. EPD: <5000 cm2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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