GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5 Battery Consumables Please clean the mould via

Please clean the mould via ethanol after the completion of each experiment

mm) is included for the placement of analysis equipment and tools

Nickel Foam for Battery Cathode Substrate  (300mm length x 80mm width x 0

Insulation ring: PP

GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5 Battery Consumables Please clean the mould viaGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Resistivity: (6. 82 7. 58)E 3 ohm. cm Carrier Concentration: (1. 07 1. 26)E19cm^ 3 Mobility: 73 77 cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces