Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1 Fe2O3 look for GHS elements of

look for GHS elements of pictograms

Size:                                         2" dia x 0

MTI has been granted the patent 2016205320316 for the Pressure Controlled Split Pouch Cells - EQ-PSPC since June 2016

Growing Method:                    CZ

Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1 Fe2O3 look for GHS elements ofSingle crystal Si Conductivity: P type ( B doped) Resistivity: 1~10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <111> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner