Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1 Slurry Mixers Surface of SrTiO3 substrate before

Surface of SrTiO3 substrate before Step treatment (AFM)

(An aluminum tray is included since July 20

Its values decline when the temperature is below 1000 oC

Please consider to have Seals metal threads to prevents leakage for MTI Flange (MTI-SEAL-MT)

Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1 Slurry Mixers Surface of SrTiO3 substrate beforeSingle crystal Si Conductive type: N type, P doped, Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 3 0. 35 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw